The TPM2003 is a high-voltage, high-current NMOS transistor array. This device consists of seven channels of low-side NMOS transistors with high-voltage outputs and free-wheeling diodes for inductive loads.

The maximum drain-current rating of a single NMOS channel is 500 mA. The device supports wide I/O voltage range from 1.8 V to 30 V. The transistors can drive in parallel for higher current capability. Enhanced ESD performance enhances system level reliability.

The TPM2003 can replace traditional Bipolar Darlington arrays with better thermal efficiency and reliability.

Features

 Pin-to-Pin of 7-channel Darlington Array (ULN2003A)

 500-mA Rated Drain Current (Per Channel)

 Very Low Output Leakage < 10 nA Per Channel

 Power Efficient with Low RDS-on

 Extended Temperature Range: TA = –40°C to 125°C

 High-Voltage Outputs 50 V

 Compatible with 1.8-V to 5.0-V Logic Interface

 Integrated Free-wheeling Diodes for Inductive Load

 Improved Noise-immunity with integrated RC filter

 Enhanced ESD Protection Exceeds JESD 22 – 2.5-kV HBM, 1.5-kV CDM

 Available in 16-pin SOP-16 and TSSOP-16 Packages

Applications

Inductive Loads

◼ Relays

◼ Unipolar Stepper & Brushed DC Motors

◼ Solenoids & Valves

 LED Indicators

 Logic Level Shifting

 Gate & IGBT Drive

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