The TPM2001 is a high-voltage, high-current NMOS transistor array. This device consists of seven channels of low-side NMOS transistors with high-voltage outputs and free-wheeling diode for inductive loads.

The maximum drain-current rating of a single NMOS channel is 1 A. The device supports wide I/O voltage range from 1.8 V to 5 V. The transistors can be paralleled for higher current capability.

The TPM2001 can replace traditional Bipolar Darlington arrays with better thermal efficiency and reliability.

Features

 1-A Rated Drain Current (Per Channel)

 Very Low Output Leakage < 20 nA Per Channel

 Power Efficient with Low RDS-on

 Extended Temperature Range: TA = –40°C to 125°C

 High-Voltage Outputs 50 V

 Compatible with 1.8-V to 5.0-V Logic Interface

 Integrated Free-wheeling Diodes for Inductive Load

 Improved Noise-immunity with integrated RC filter

 ESD Protection Exceeds JESD 22 – 2.5-kV HBM, 1.5-kV CDM

 Available in 10-pin MSOP-10 Package

Applications

 Inductive Loads

◼ Relays

◼ Unipolar Stepper & Brushed DC Motors

◼ Solenoids & Valves

 LED Indicators

 Logic Level Shifting

 Gate & IGBT Drive

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