华邦（Winbond）

　　Winbond SDRAM/DDR 系列产品特点：

•高速度— 1600Mbps的DDR3能迎合需要高速效的数码电视、STB、蓝光播放机和网络设备；

•低功耗 —DDR3(1.5V) 的电压比DDR2(1.8V)低，能减低系统的耗电量；

•工作温度范围宽 - 最新的Q版本工作温度在-40 to +105；

•高品质 - 由于是国内生产与加工，无形中降低了很多成本。广泛应用于数码类以及消费类电子产品中；

•产线长 - Winbond已拥有全系列的DRAM产品。其中以TSOP-II和FBGA封装的128Mb~256Mb SDRAM、128Mb~512Mb DDR。

Winbond SDRAM系列规格参数
Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9816G6IB	16M	1Mx16	-6	166 MHz	3.3V±0.3V	Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant
			-7	143 MHz	2.7V~3.6V
W9816G6IH	16M	1Mx16	-5	143 MHz	3.3V±0.3V	Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant
				200 MHz
			-6/-6I/-6A	166 MHz	3.3V±0.3V
			-7/-7I	143 MHz	2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9864G2IH	64M	2Mx32	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-7	143 MHz	2.7V~3.6V
W9864G6IH	64M	4Mx16	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-7/-7S	143 MHz	2.7V~3.6V
W9864G6JH	64M	4Mx16	-5	200 MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6I	166 MHz
			-7/-7S	143 MHz	2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.

Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9812G2IH	128M	4Mx32	-6C	166 MHz	3.3V±0.3V	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
			-6/-6I/-6A		2.7V~3.6V
			-75	133 MHz
W9812G2IB	128M	4Mx32	-6/-6I/-6A	166 MHz	2.7V~3.6V	Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant
			-75	133 MHz
W9812G6IH	128M	8Mx16	-5	200 MHz	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant
			-6/-6C/-6I/-6A	166 MHz
			-75	133 MHz
W9812G6JH	128M	8Mx16	-5	200 MHz	3.3V±0.3V	TSOP II 54-pin, 400 mil using Lead free with RoHS compliant
			-6/-6I	166 MHz
			-75	133 MHz
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization	Speed Grade	Max Freq	Voltage	Package
W9825G2DB	256M	8Mx32	-6	166 MHz	3.3V±0.3V	TFBGA 90 ball using Pb free with RoHS compliant
			-6I		2.7V~3.6V
			-75/75I	133 MHz
W9825G6EH	256M	16Mx16	-5	200MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
			-6/-6I/-6A	166 MHz
			-6	133 MHz
			-75/75I/75A
W9825G6JH	256M	16Mx16	-5	200MHz	3.3V±0.3V	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
			-6/-6I	166 MHz
			-6	133 MHz
			-75
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Winbond DDR/DDR1系列规格参数
Part No.	Density	Organization		Speed Grade
W9464G6IH	64Mb DDR	4Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
W9464G6JH	64Mb DDR	4Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5	200 MHz	CL3
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.

Part No.	Density	Organization		Speed Grade
W9412G6IH	128Mb DDR	8Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
W9412G6JH	128Mb DDR	8Mx16	4 Banks	-4	250 MHz	CL3/CL4
				-5	200 MHz	CL3
W9412G2IB	128Mb DDR	4Mx32	4 Banks	-4	250 MHz	CL3/CL4
				-5/-5I	200 MHz	CL3
				-6/-6I	166 MHz	CL2.5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design.

Part No.	Density	Organization		Speed Grade
W9712G6JB	256Mb DDR	8Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9712G8JB	256Mb DDR	16Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization		Speed Grade
W9712G6JB	128Mb DDR2	8Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9712G8JB	128Mb DDR2	16Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W9725G6JB	256Mb DDR2	16Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I/25A	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9725G8JB	256Mb DDR2	32Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25/ 25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W9751G6JB	512Mb DDR2	32Mx16	4 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W9751G8JB	512Mb DDR2	64Mx8	4 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W971GG6JB	1G DDR2	64Mx16	8 Banks	-18	DDR2-1066	2006/6/6
				-25/25I	DDR2-800	2005/5/5
				-3	DDR2-667	2005/5/5
W971GG8JB	1G DDR2	128Mx8	8 Banks	-18	DDR2-1066	2006/6/6
				-25/25I	DDR2-800	2005/5/5
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

Part No.	Density	Organization		Speed Grade		CL-tRCD-tRP?
W972GG6JB	2G DDR2	128Mx16	8 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
W972GG8JB	2G DDR2	256Mx8	8 Banks	-18	DDR2-1066	2007/7/7
				-25/25I	DDR2-800	5-5-5/6-6-6
				-3	DDR2-667	2005/5/5
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.

深圳市昊海鑫科技有限公司

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Winbond代理商|华邦代理商|华邦Winbond代理商深圳昊海鑫科技作为台湾【Winbond华邦半导体】在国内的知名Winbond华邦代理商，本着“全力服务客户，为客户创造终生价值”原则。努力创造“资源平台的共享、成就客户、成就公司”的美好前景。华邦电子创立于1987年9月，今日的华邦主要以专业的内存集成电路公司为定位，主要业务包含产品设计、技术研发、晶圆制造、营销及售后服务，致力以先进的半导体设计及生产技术，提供客户特殊规格的内存解决方案。华邦电子集团以「DRAM产品事业群」、「闪存IC事业群」及「记忆IC制造事业群」三大事业群为核心，不断追求产品与技术的创新，以落实竞争优势。DRAM产品方面，以所擅长的高速度和低功率内存核心设计技术，推出包含Specialty DRAM、以及Pseudo SRAM 和Low Power SDRAM之Mobile RAM系列产品，可广泛应用在消费性(Consumer)、通讯(Communication)、计算机周边(Computer Peripheral)以及车用电子(Automobile)等四大领域，而具双倍数据传输率(Double Data Rate / DDR) Graphics DRAM-GDDR产品，则锁定个人计算机、游戏机和多媒体等应用市场对于高效能和高速度绘图内存解决方案的需求。