The TPM2803 is a high-voltage, high-current NMOS transistor array. This device consists of eight channels of low-side NMOS transistors with highvoltage outputs and a free-wheeling diode for inductive loads.

The maximum drain-current rating of a single NMOS channel is 500 mA. The device supports a wide I/O voltage range from 1.8 V to 5 V. The transistors can be paralleled for higher current capability. Enhanced ESD performance enhances system-level reliability.

The TPM2803 can replace traditional bipolar Darlington arrays with better thermal efficiency and reliability.

Features

 Pin-to-Pin of 8-channel Darlington Array (ULN2803A)

 500-mA Rated Drain Current (Per Channel)

 Very Low Output Leakage < 10 nA Per Channel

 Power Efficient with Low RDS-on

 Extended Temperature Range: TA = –40°C to 125°C

 High-Voltage Outputs 50 V

 Compatible with 1.8-V to 5.0-V Logic Interface

 Integrated Free-wheeling Diodes for Inductive Load

 Improved Noise-immunity with Integrated RC Filter

 ESD Protection Exceeds JESD 22 to 2-kV HBM, 1.5-kV CDM

 Available in 18-pin SOP18 Package

Applications

 Inductive Loads - Relays - Unipolar Stepper & Brushed DC Motors - Solenoids & Valves

 LED Indicators

 Logic Level Shifting

 Gate & IGBT Drive

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